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Processing improvements have lead to the complete oxidation of the Si matrix eliminating the conducting Si in the channel walls of the Si MCPs allowing high voltages to be supported. However, attempts to meet other channel plate characteristics met with little success due to thermal runaway or arcing during operation, high voltage is required for electron gain. Open area ratios of as high as 95% have been achieved using lithography. A strong desire exists to fabricate MCPs with accepted lithographic techniques using Si as the base material to improve uniformity and throughput. These techniques are beginning to run into their feasible limits in terms of channel size, open area ratio, uniformity, and material issues. The soluble core is removed with wet chemical processing. Core and clad glass are drawn together, stacked, drawn again, and finally stacked in the desired pattern. Conventional fabrication of MCPs follow the lines of glass drawing and etching technology. more Glass microchannel plates (MCPs) have been in use by numerous manufactuers in a variety of electron multiplication applications. Glass microchannel plates (MCPs) have been in use by numerous manufactuers in a variety of electr. A discussion of a reflection mode hybrid APD development is included as well. The Imaging Hybrid Avalanche Photo Diode (IHAPD) is targeted to bioluminescence, chemoluminescence and other low light level spectral imaging. This process approach also facilitates the parallel development of high Quantum Efficiency (QE), low dark count III-V based photocathodes with a broad range of spectral response from UV to NIR. A design and fabrication process is being developed that can be readily adapted for fast-turnaround proof-of-concept prototypes using a variety of solid state detectors. This integration as a post-process allows significant flexibility in investigation at very low light levels. Signals read at the output of the device can be used to build up images, integrated over the time scales relevant to the process being studied. The device promises gains of over 106 and sub-millimeter spatial resolution. more A hybrid photodetector based on a Gen 3 photocathode and electron-bombarded silicon, non-pixilated, position sensitive, Avalanche Photo Diode (APD) is being developed. It is shown that the hydrodynamic simulation recovers more of the important physics gosverning these devices than the standard drift-diffusion method.Ī hybrid photodetector based on a Gen 3 photocathode and electron-bombarded silicon, non-pixilate. Both narrow and wide base devices are simulated to illustrate the importance and relevance of the hydrodynamic method in a realistic and important semiconductor device.
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Additionally, we examine a GaAs/AlGaAs heterostructure bipolar transistor. The workings of silicon and GaAs based ballistic diodes are examined using the drift-diffusion and hydrodynamic simulations. Finally, we illustrate the method with several computational examples. The boundary conditions and material constituent relations are presented which complete the solution. The basic equations and their auxiliary relationships governing the hydrodynamic simulation are developed. This general technique is next applied to the specific problem of the hydrodynamic device simulation equations. From use of Newton's method, the system of equations arising from the discretization equation applied to the nodes in the simulation domain, can then be solved. A discretization equation based on the general differential equation is next determined. Solution of this general differential equation forms the basis of the mathematical model employed. A general differential equation which is characteristic of the relevant semiconductor equations is first presented and discussed. A very general approach is given to illustrate a mathematical method of the solution. more In this paper, we present an introduction to hydrodynamic-based simulation of semiconductor devices. In this paper, we present an introduction to hydrodynamic-based simulation of semiconductor devic.